Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz
Résumé
In this paper, we report electrical results and handling power results of different Schottky diodes based on 620 nm of n- Gallium Nitride (GaN) fabricated on ammonothermal GaN substrate. The breakdown voltage obtained is 115 V/µm. Diodes held 29.6 dBm at zero bias and we detected an output voltage of 16.5 V at 94 GHz
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Abstract-wocsdice 2023 - Abou Daher et al (1).pdf (257.8 Ko)
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