Ridge polariton laser: different from a semiconductor edge-emitting laser - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Pré-Publication, Document De Travail Année : 2022

Ridge polariton laser: different from a semiconductor edge-emitting laser

Résumé

We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 − 60 µm long GaN etched ridge structures with vertical Bragg reflectors. We investigate the laser threshold under optical pumping and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversion-less polaritonic gain about 10 times larger than in equivalent GaN lasers. The modelling of the cavity free spectral range demonstrates the polaritonic nature of the modes.
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Dates et versions

hal-03521600 , version 1 (11-01-2022)
hal-03521600 , version 2 (05-10-2022)

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Citer

H Souissi, M Gromovyi, T Gueye, C Brimont, L Doyennette, et al.. Ridge polariton laser: different from a semiconductor edge-emitting laser. 2022. ⟨hal-03521600v1⟩

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