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Article Dans Une Revue Optics Express Année : 2006

Photomixing at 1.55 µm in ion-irradiated In0.53Ga0.47As on InP

Résumé

We report the first demonstration of a terahertz photomixer made of ion-irradiated In0.53Ga0.47As lattice-matched to InP and fiber-optic coupled with the drive lasers. A continuous-wave radiation is generated at frequencies up to 0.8 THz by photomixing two continuous-wave laser diodes around 1.55 μm. The measured 3dB-down bandwidth of 300 GHz yields a carrier lifetime of 0.53 ps, in agreement with the value of 0.41 ps measured in pump probe experiments. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.

Dates et versions

hal-00162818 , version 1 (16-07-2007)

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Citer

Nicolas Chimot, Juliette Mangeney, Paul Crozat, Jean-Michel Lourtioz, Karine Blary, et al.. Photomixing at 1.55 µm in ion-irradiated In0.53Ga0.47As on InP. Optics Express, 2006, 14 (5), pp.1856-1861. ⟨10.1364/OE.14.001856⟩. ⟨hal-00162818⟩
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