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Article Dans Une Revue Journal of Applied Physics Année : 2009

Dislocation density and band structure effects on spin dynamics in GaN

Résumé

We present experimental results obtained on wurtzite epitaxial GaN layers grown on sapphire and SiC substrates. Thanks to a set of samples with different values of the residual strain, we demonstrate that the high dislocation density enhances the spin relaxation rate through the Elliott-Yafet mechanism. This fact is validated by the T-1 temperature dependence of the spin-relaxation times. The influence of the valence-band structure on the hole-spin relaxation is also highlighted. In particular, a decrease in the hole-spin relaxation rate, accompanied by a strong polarization rate (similar to 50%) of the differential reflectivity signal (Delta R/R), is observed when the splitting Delta E-AB between the heavy-hole and the light-hole bands is larger than the broadening Gamma(A) of the A excitonic transition. On the contrary, the overlap of the A and B resonances for Gamma(A)>Delta E-AB is responsible for a decrease in the Delta R/R polarization rate (similar to 10%) and an enhancement of the spin relaxation rate.
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Dates et versions

hal-00545172 , version 1 (09-12-2010)

Identifiants

Citer

Christelle Brimont, Mathieu Gallart, Atef Gadalla, Olivier Cregut, Bernd Hoenerlage, et al.. Dislocation density and band structure effects on spin dynamics in GaN. Journal of Applied Physics, 2009, 105, pp.023502. ⟨10.1063/1.3056657⟩. ⟨hal-00545172⟩

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