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Article Dans Une Revue Acta Materialia Année : 2013

Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study

Y. El Gmili
  • Fonction : Auteur
K. Pantzas
T. Moudakir
  • Fonction : Auteur
S. Sundaran
  • Fonction : Auteur
J. Hester
  • Fonction : Auteur
A. Ahaitouf
  • Fonction : Auteur
A. Ougazzaden

Résumé

We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers inserted during InGaN growth. It is shown that such a structure suppresses the In concentration fluctuations and corresponding different states of strain relaxation with depth, both detrimental to solar cell applications. Measurements performed by X-ray diffraction, cathodoluminescence and photoluminescence demonstrate that this multilayer growth is a promising approach to increase both the InGaN layer total thickness and In content in InGaN epilayers. As an example, single-phase 120 nm thick InGaN with 14.3% In content is obtained and found to possess high structural quality.

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Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaran, et al.. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study. Acta Materialia, 2013, 61, pp.6587-6596. ⟨10.1016/j.actamat.2013.07.041⟩. ⟨hal-00845424⟩
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