Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue ACS Applied Electronic Materials Année : 2021

Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

Résumé

We demonstrate the fabrication of vertical InGaN light-emitting diodes (LEDs) on large-area free-standing membranes, using a mechanical lift-off technique enabled by 2D h-BN. 30 μm-thick electroplated copper deposited on the epilayer (i) gives rigidity to the structure, preventing crack generation, (ii) functions as a back mirror and as a heat sink, and (iii) enables one-step self-lift-off and transfer of LED structures from h-BN/sapphire during a thermal treatment at 100 °C. Free-standing arrays of LEDs on thick membranes were processed and their electro-optical performance was characterized. This approach can provide a solution for the fabrication of low-cost, wafer scale, crack-free, and highly reproducible free-standing arrays of vertical LEDs with up to centimeter-size areas.
Fichier principal
Vignette du fichier
ACS-applied-electronic-materials-Manuscript-final-corrected-second-revision.pdf (628.31 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03350389 , version 1 (24-12-2021)

Identifiants

Citer

Soufiane Karrakchou, Suresh Sundaram, Rajat Gujrati, Phuong Vuong, Adama Mballo, et al.. Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer. ACS Applied Electronic Materials, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩. ⟨hal-03350389⟩
42 Consultations
105 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More