Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Philosophical Magazine Année : 2021

Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates

Résumé

The mechanical stability of commercial GaP/Si templates during thermal annealing and subsequent growth of GaP and AlGaP using metal-organic chemical-vapour deposition is investigated. Although the as-grown GaP layer of the template originally presents an excellent surface morphology, annealing at temperatures between 645°C to 845°C to remove the native oxide prior to growth leads to plastic relaxation, accompanied by a variety of defects, including a dense grid of micro-twins. These micro-twins detrimentally affect GaP and AlGaP layers grown subsequently on the template.
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Dates et versions

hal-03362299 , version 1 (01-10-2021)

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K. Pantzas, G. Beaudoin, M. Bailly, A. Martin, A. Grisard, et al.. Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates. Philosophical Magazine, 2021, 101 (20), pp.2189-2199. ⟨10.1080/14786435.2021.1962016⟩. ⟨hal-03362299⟩
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