Growth of boron doped CVD diamond on a (113) orientation for power electronic devices - CNRS - Centre national de la recherche scientifique Access content directly
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hal-03578189 , version 1 (17-02-2022)

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  • HAL Id : hal-03578189 , version 1

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Audrey Valentin, A Tallaire, V Mille, L William, M A Pinault-Thaury, et al.. Growth of boron doped CVD diamond on a (113) orientation for power electronic devices. Surface and Bulk Defects in Diamond (SBDD ) XXI, Mar 2016, Hasselt, Belgium. ⟨hal-03578189⟩
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