Phase decomposition in the Ni–InGaAs system at high annealing temperature
Résumé
III-V semiconductor compounds are increasingly attracting attention as promising candidates for serving as channel materials, especially in the development of contact recovery for sub-10 nm metal–oxide–semiconductor field-effect transistor (MOSFETs) devices or photonic applications. To contribute to this research, the Ni–InGaAs contact was formed by a solid-state reaction between Ni and a (In0.53Ga0.47)As layer after heat treatment at 550 °C by a rapid thermal annealing. Atom Probe Tomography (APT) analyses were carried out to study the distribution of elements in the intermetallic phases formed. It was found that at this high temperature, an As-rich phase and a Ga-rich phase are formed simultaneously. The co-existence of these two new phases reveals the occurrence of chemical diffusion and decomposition processes at the Ni–InGaAs interface. These results provide insights into the formation of the As-rich and Ga-rich phases within the quaternary (Ni–Ga–As–In) system upon annealing at 550 °C.
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