Gain mechanism below Mott transition and VCSEL operation in a ZnO microcavity
Résumé
The VCSEL operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. It is observed as the cavity switches from the strong coupling to the weak coupling regime at high carrier density. A gain-related transition is observed below 240 K, which appears before breaking the strong coupling. This shows that exciton scattering processes are involved in the gain process.
Domaines
Autre [cond-mat.other]
Origine : Fichiers produits par l'(les) auteur(s)