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Pré-Publication, Document De Travail Année : 2011

VCSEL with excitonic gain in a ZnO microcavity

Résumé

The VCSEL operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
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Dates et versions

hal-00554480 , version 1 (10-01-2011)
hal-00554480 , version 2 (05-04-2011)
hal-00554480 , version 3 (31-05-2011)

Identifiants

  • HAL Id : hal-00554480 , version 2

Citer

Thierry Guillet, Christelle Brimont, Pierre Valvin, Bernard Gil, Thierry Bretagnon, et al.. VCSEL with excitonic gain in a ZnO microcavity. 2011. ⟨hal-00554480v2⟩
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