Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN. - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 1999

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN.

Résumé

Room temperature photoreflectance investigations have been performed on a series of AlGaN layers grown both by metalorganic vapor phase epitaxy and molecular beam epitaxy on c-plane sapphire substrates. The aluminum composition was ranging between 0% and 20%, and was determined independently in the different growth laboratories, by various methods. It is found that within the experimental uncertainty, there is no detectable bowing parameter in these alloys. This contradicts some previous experimental investigations and confirms other ones.

Dates et versions

hal-01302666 , version 1 (14-04-2016)

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Citer

Tj Ochalski, Bernard Gil, Pierre Lefebvre, Nicolas Grandjean, Mathieu Leroux, et al.. Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN.. Applied Physics Letters, 1999, 74 (22), pp.3353. ⟨10.1063/1.123342⟩. ⟨hal-01302666⟩
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