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Article Dans Une Revue physica status solidi (a) Année : 2018

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Rémi Comyn
Eric Frayssinet
  • Fonction : Auteur
Mario Khoury
  • Fonction : Auteur
Marie Lesecq
  • Fonction : Auteur
Nicolas Defrance
  • Fonction : Auteur
Jean-Claude de Jaeger
  • Fonction : Auteur

Résumé

Despite a lower growth temperature is generally considered as a drawback for achieving high crystal quality, the necessity to reduce the nucleation temperature of AlN on Silicon has permitted Molecular Beam Epitaxy (MBE) to demonstrate high performance for GaN transistors operating at high frequency. Compared to Metal-Organic Vapor Phase Epitaxy (MOVPE), the control of the interface between the AlN nucleation layer and the substrate is easier and the reduced growth temperature allows to obtain a more electrically resistive interface while keeping good crystal quality. More, we show that further reducing the growth temperature within the nucleation and stress mitigating layers has a noticeable impact on the lateral and vertical buffer leakage currents. At the same time the buffer of MBE grown HEMT structures exhibits low RF propagation losses (below 0.5 dB/mm up to 70 GHz). Also, results obtained with structures regrown by MOVPE on MBE AlN-on-Si templates confirm that the thermal budget is critical for the resistivity of AlN/Si. On the other hand, the insertion of a 1.5 µm thick Al0.05Ga0.95N layer within a 2 µm HEMT structure significantly improves the vertical breakdown voltage up to 740 V permitting to compare favourably with MOVPE epilayers with similar total thickness.
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hal-03576045 , version 1 (15-02-2022)

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Yvon Cordier, Rémi Comyn, Eric Frayssinet, Mario Khoury, Marie Lesecq, et al.. Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon. physica status solidi (a), 2018, 215 (9), pp.1700637. ⟨10.1002/pssa.201700637⟩. ⟨hal-03576045⟩
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