Single-ion anisotropy in Mn-doped diluted magnetic semiconductors
Résumé
Motivated by recent developments in spintronics, we propose an explanation of the single-ion anisotropy of Mn-doped diluted magnetic semiconductors using as an example high-quality ZnO:Mn thin films for which X-band electron-paramagnetic-resonance studies were performed. We derive an analytic formula for the axial parameter D and we prove its validity by the exact diagonalization method. We demonstrate a quantitative agreement between the experimental data and our model. These results bring insights into a long-standing problem of single-ion anisotropy in magnetic solids.
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