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Article Dans Une Revue Physical Review B Année : 2009

Single-ion anisotropy in Mn-doped diluted magnetic semiconductors

Résumé

Motivated by recent developments in spintronics, we propose an explanation of the single-ion anisotropy of Mn-doped diluted magnetic semiconductors using as an example high-quality ZnO:Mn thin films for which X-band electron-paramagnetic-resonance studies were performed. We derive an analytic formula for the axial parameter D and we prove its validity by the exact diagonalization method. We demonstrate a quantitative agreement between the experimental data and our model. These results bring insights into a long-standing problem of single-ion anisotropy in magnetic solids.
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Dates et versions

hal-03586882 , version 1 (24-02-2022)

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Adrien Savoyant, A Stepanov, R Kuzian, C Deparis, C Morhain, et al.. Single-ion anisotropy in Mn-doped diluted magnetic semiconductors. Physical Review B, 2009, 80, ⟨10.1103/physrevb.80.115203⟩. ⟨hal-03586882⟩
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