Surface Two-Dimensional Hole Gas in Si doped β-Ga2O3 Thin Film - Institut des Nanosciences de Paris Access content directly
Journal Articles Journal of Alloys and Compounds Year : 2024

Surface Two-Dimensional Hole Gas in Si doped β-Ga2O3 Thin Film

Abstract

Although two-dimensional electron gases have been realized in a number of semiconductor surfaces, examples of two-dimensional hole gases (2DHG)-the counterpart to 2DEG-are still very limited. Besides, owing to the deep energy level nature of potential dopants, achieving acceptor p-type β-Ga2O3 is a well-known challenge so far. In this work, we report what appears to be an exceptional p-type 2DHG surface on a Si-doped monoclinic (010) β-Ga2O3 crystal which otherwise is n-type in the bulk. The majority of the free carries at the surface have been determined to be holes with a sheet concentration of p ~ 8.7×10 13 cm-2 and a puzzlingly high mobility value of µh ~ 80 cm 2 /(V•s) at room T.
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Dates and versions

hal-04271998 , version 1 (06-11-2023)

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Ekaterine Chikoidze, Jacob Leach, Zeyu Chi, Jurgen von Bardeleben, Belén Ballesteros, et al.. Surface Two-Dimensional Hole Gas in Si doped β-Ga2O3 Thin Film. Journal of Alloys and Compounds, 2024, pp.172713. ⟨10.1016/j.jallcom.2023.172713⟩. ⟨hal-04271998⟩
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