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Communication Dans Un Congrès Année : 2010

Polar and Semipolar III-Nitrides for long wavelength intersubband devices

Résumé

Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar and semipolar AlGaN/GaN technologies for this relevant spectral range.
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Dates et versions

hal-00498138 , version 1 (06-07-2010)

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  • HAL Id : hal-00498138 , version 1

Citer

E. Monroy, P. K. Kandaswamy, H. Machhadani, A. Wirthmüller, S. Sakr, et al.. Polar and Semipolar III-Nitrides for long wavelength intersubband devices. Conference 7608: Photonic West 2010: Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco, United States. pp.76081G. ⟨hal-00498138⟩
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