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Article Dans Une Revue Semiconductor Science and Technology Année : 2010

Electrical properties of self-assembled InAs/InAlAs quantum dots on InP

Résumé

The characteristics of InAs self-assembled quantum dots (QDs) grown on InAlAs/InP (0 0 1) have been investigated by capacitance–voltage (C–V) measurements and deep-level transient spectroscopy (DLTS). The depth profile of the apparent electron concentration obtained by C–V measurements shows significant carrier accumulation around the position of the InAs QDs plane. In addition to the D1–D5 traps, which are commonly detected in InAlAs layers grown on InP by molecular beam epitaxy (MBE), DLTS investigations show three InAs-related levels located at about 76, 202 and 246 meV below the InAlAs conduction band edge. The applied field is found to significantly enhance tunnel emission processes as seen in the broadening of the peaks with increasing reverse bias. The results suggest that defects in the material barrier can enhance electron tunnelling through barriers.
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Dates et versions

hal-00623432 , version 1 (16-03-2023)

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Paternité - Pas d'utilisation commerciale

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N. Hamdaoui, R. Ajjel, H. Maaref, B. Salem, G. Bremond, et al.. Electrical properties of self-assembled InAs/InAlAs quantum dots on InP. Semiconductor Science and Technology, 2010, 25 (6), pp.065011. ⟨10.1088/0268-1242/25/6/065011⟩. ⟨hal-00623432⟩
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