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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 1999

Temperature-dependent electron-lattice thermalization in GaAs

Résumé

Thermalization of hot electron with the lattice is precisely investigated in bulk GaAs in the temperature range 50–300 K using a high-sensitivity two-color femtosecond absorption saturation technique. The results show that for lattice temperatures larger than 100 K, the photoexcited electron gas eventually thermalizes with the lattice with a characteristic time close to the LO phonon lifetime as a consequence of the nonequilibrium hot-phonon effect. For lower temperatures, the electron-lattice thermalization time is found to be longer than the LO phonon lifetime in agreement with numerical simulations of the coupled carrier-LO phonon dynamics.
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Dates et versions

hal-01550426 , version 1 (29-06-2017)

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N. del Fatti, P. Langot, R. Tommasi, F. Vallee. Temperature-dependent electron-lattice thermalization in GaAs. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 59 (7), pp.4576-4579. ⟨10.1103/PhysRevB.59.4576⟩. ⟨hal-01550426⟩
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