Cation-substituted Cu2O deposited by MOCVD as a transparent p-type semiconducting oxide films with enhanced performances: A comparison between strontium, magnesium and tin incorporation - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2018

Cation-substituted Cu2O deposited by MOCVD as a transparent p-type semiconducting oxide films with enhanced performances: A comparison between strontium, magnesium and tin incorporation

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Matériaux
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hal-01981233 , version 1 (14-01-2019)

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  • HAL Id : hal-01981233 , version 1

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Joao Resende, Laurent Bergerot, L. Bottiglieri, S. Brochen, Carmen Jiménez, et al.. Cation-substituted Cu2O deposited by MOCVD as a transparent p-type semiconducting oxide films with enhanced performances: A comparison between strontium, magnesium and tin incorporation. Matériaux 2018, Nov 2018, Strasbourg, France. ⟨hal-01981233⟩
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