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Article Dans Une Revue ACS Nano Année : 2022

A “Click” Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance

Jialei Miao
  • Fonction : Auteur
Linlu Wu
  • Fonction : Auteur
Zheng Bian
  • Fonction : Auteur
Qinghai Zhu
  • Fonction : Auteur
Tianjiao Zhang
  • Fonction : Auteur
Xin Pan
  • Fonction : Auteur
Jiayang Hu
  • Fonction : Auteur
Wei Xu
  • Fonction : Auteur
Yeliang Wang
  • Fonction : Auteur
Yang Xu
  • Fonction : Auteur
Bin Yu
  • Fonction : Auteur
Wei Ji
  • Fonction : Auteur
Xiaowei Zhang
  • Fonction : Auteur
Jingsi Qiao
  • Fonction : Auteur
Yuda Zhao
  • Fonction : Auteur

Résumé

Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the post-Moore’s Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal–semiconductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS2, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 °C) and it is compatible with micro/nano processing technology. The contact resistance of MoS2 FETs can be greatly reduced by ∼12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS2 FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

Domaines

Matériaux
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Dates et versions

hal-03933852 , version 1 (10-01-2023)

Identifiants

Citer

Jialei Miao, Linlu Wu, Zheng Bian, Qinghai Zhu, Tianjiao Zhang, et al.. A “Click” Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance. ACS Nano, 2022, 16 (12), pp.20647-20655. ⟨10.1021/acsnano.2c07670⟩. ⟨hal-03933852⟩
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