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Article Dans Une Revue Materials Science in Semiconductor Processing Année : 2023

Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting

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hal-04125505 , version 1 (12-06-2023)

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Samba Ndiaye, Sébastien Duguay, François Vurpillot, Chiara Carraro, Gianluigi Maggioni, et al.. Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting. Materials Science in Semiconductor Processing, 2023, 164, pp.107641. ⟨10.1016/j.mssp.2023.107641⟩. ⟨hal-04125505⟩
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