Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM
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Material chemistryOrigin | Files produced by the author(s) |
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Origin | Files produced by the author(s) |
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https://cnrs.hal.science/hal-04216926
Submitted on : Wednesday, June 5, 2024-10:30:05 AM
Last modification on : Friday, June 7, 2024-1:25:09 PM