Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM - CNRS - Centre national de la recherche scientifique Access content directly
Journal Articles Solid-State Electronics Year : 2023

Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM

Tarek Spelta
Marc Veillerot
  • Function : Author
Eugénie Martinez
Denis Mariolle
CV
Roselyne Templier
  • Function : Author
Nicolas Chevalier
  • Function : Author
Pedro Fernandes Paes Pinto Rocha
  • Function : Author
Bassem Salem
Laboratoire des technologies de la microélectronique
Laura Vauche
  • Function : Author
Bérangère Hyot
  • Function : Author

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Material chemistry
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https://cnrs.hal.science/hal-04216926

Submitted on : Wednesday, June 5, 2024-10:30:05 AM

Last modification on : Friday, June 7, 2024-1:25:09 PM

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hal-04216926 , version 1 (05-06-2024)

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Tarek Spelta, Marc Veillerot, Eugénie Martinez, Denis Mariolle, Roselyne Templier, et al.. Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM. Solid-State Electronics, 2023, 208, pp.108743. ⟨10.1016/j.sse.2023.108743⟩. ⟨hal-04216926⟩

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