Crystal distortions and structural defects at several scales generated during the growth of silicon contaminated with carbon - CNRS - Centre national de la recherche scientifique Access content directly
Other Publications ESRF Spotlight on Science Year : 2023

Crystal distortions and structural defects at several scales generated during the growth of silicon contaminated with carbon

Abstract

Carbon is a major impurity when one wants to produce silicon for efficient photovoltaic solar cells. Its impact on the generation of distortions and defects was studied by X-ray imaging at ESRF both in situ, during solidification, and ex situ.
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Monday, May 20, 2024
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Monday, May 20, 2024
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Dates and versions

hal-04296745 , version 1 (20-11-2023)

Identifiers

  • HAL Id : hal-04296745 , version 1

Cite

H Ouaddah, G Regula, G Reinhart, I Périchaud, F Guittonneau, et al.. Crystal distortions and structural defects at several scales generated during the growth of silicon contaminated with carbon. 2023. ⟨hal-04296745⟩
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