Formation of highly doped and defect-free p-type junctions at reduced cost remains one of the important limitations for the manufacturing of high performance SiC devices. Today process of record presents some limitations in terms of defectivity, maximal implanted doses (~1E15 at/cm²) and cost (carbon cap required during furnace annealing to avoid SiC dissociation). Indeed, if the implanted dose becomes too important (>4E15 at/cm²), basal stacking faults (BSF) are formed during the furnace annealing step. To overcome these limitations, an alternative solution based on high-temperature (>500°C) ion implantation and microsecond ultraviolet laser annealing (later referred as UV-LA) is proposed. This solution presents the advantages to enable implantation and activation of high doses of aluminum (1E16 at/cm²) while remaining defect-free. Moreover, the manufacturing costs with this solution are reduced since there is no need of any carbon cap during the laser annealing step.