AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range - CNRS - Centre national de la recherche scientifique
Journal Articles Semiconductor Science and Technology Year : 2019

AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

P Sai
  • Function : Author
D But
  • Function : Author
I Yahniuk
  • Function : Author
M Grabowski
  • Function : Author
M Sakowicz
  • Function : Author
P Kruszewski
  • Function : Author
P Prystawko
  • Function : Author
A Khachapuridze
  • Function : Author
K Nowakowski-Szkudlarek
  • Function : Author
J Przybytek
  • Function : Author
P Wiśniewski
  • Function : Author
B Stonio
  • Function : Author
M Słowikowski
  • Function : Author
S Rumyantsev
  • Function : Author
G Cywiński
  • Function : Author

Dates and versions

hal-04840387 , version 1 (16-12-2024)

Identifiers

Cite

P Sai, D But, I Yahniuk, M Grabowski, M Sakowicz, et al.. AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range. Semiconductor Science and Technology, 2019, 34 (2), pp.024002. ⟨10.1088/1361-6641/aaf4a7⟩. ⟨hal-04840387⟩
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