Journal Articles
Semiconductor Science and Technology
Year : 2019
Frederic Teppe : Connect in order to contact the contributor
https://cnrs.hal.science/hal-04840387
Submitted on : Monday, December 16, 2024-12:48:40 PM
Last modification on : Wednesday, December 18, 2024-3:22:52 AM
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P Sai, D But, I Yahniuk, M Grabowski, M Sakowicz, et al.. AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range. Semiconductor Science and Technology, 2019, 34 (2), pp.024002. ⟨10.1088/1361-6641/aaf4a7⟩. ⟨hal-04840387⟩
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