Proceedings Year : 2019

Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation

P. Sai
  • Function : Author
D. But
  • Function : Author
M. Dub
  • Function : Author
M. Sakowicz
  • Function : Author
B. Grzywacz
  • Function : Author
P. Prystawko
  • Function : Author
G. Cywinski
  • Function : Author
S. Rumyantsev
  • Function : Author
No file

Dates and versions

hal-04840400 , version 1 (16-12-2024)

Identifiers

Cite

P. Sai, D. But, M. Dub, M. Sakowicz, B. Grzywacz, et al.. Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation. ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), IEEE, pp.90-93, 2019, ⟨10.1109/ESSDERC.2019.8901702⟩. ⟨hal-04840400⟩
3 View
0 Download

Altmetric

Share

More