Proceedings
Year : 2019
Frederic Teppe : Connect in order to contact the contributor
https://cnrs.hal.science/hal-04840400
Submitted on : Monday, December 16, 2024-12:54:06 PM
Last modification on : Wednesday, December 18, 2024-3:22:47 AM
Cite
P. Sai, D. But, M. Dub, M. Sakowicz, B. Grzywacz, et al.. Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation. ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), IEEE, pp.90-93, 2019, ⟨10.1109/ESSDERC.2019.8901702⟩. ⟨hal-04840400⟩
Collections
3
View
0
Download