Proceedings Year : 2019

Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation

P. Sai
  • Function : Author
D. But
  • Function : Author
M. Dub
  • Function : Author
M. Sakowicz
  • Function : Author
B. Grzywacz
  • Function : Author
P. Prystawko
  • Function : Author
G. Cywinski
  • Function : Author
W. Knap
  • Function : Author
Axe Physique Appliquée (L2C)
S. Rumyantsev
  • Function : Author

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Physics [physics]

Frederic Teppe  : Connect in order to contact the contributor

https://cnrs.hal.science/hal-04840400

Submitted on : Monday, December 16, 2024-12:54:06 PM

Last modification on : Wednesday, December 18, 2024-3:22:47 AM

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hal-04840400 , version 1 (16-12-2024)

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P. Sai, D. But, M. Dub, M. Sakowicz, B. Grzywacz, et al.. Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation. ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), IEEE, pp.90-93, 2019, ⟨10.1109/ESSDERC.2019.8901702⟩. ⟨hal-04840400⟩

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