Article Dans Une Revue Micromachines Année : 2021

Graphene/AlGaN/GaN RF Switch

Yevhen Yashchyshyn
  • Fonction : Auteur
Paweł Bajurko
Jakub Sobolewski
Pavlo Sai
  • Fonction : Auteur
Aleksandra Przewłoka
  • Fonction : Auteur
Aleksandra Krajewska
Paweł Prystawko
Maksym Dub
  • Fonction : Auteur
Sergey Rumyantsev
Grzegorz Cywiński

Résumé

RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters.

Dates et versions

hal-04840413 , version 1 (16-12-2024)

Identifiants

Citer

Yevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, et al.. Graphene/AlGaN/GaN RF Switch. Micromachines, 2021, 12 (11), pp.1343. ⟨10.3390/mi12111343⟩. ⟨hal-04840413⟩
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