A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I -V Curve and S-Parameters - IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation Access content directly
Journal Articles IEEE Transactions on Microwave Theory and Techniques Year : 2024

A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I -V Curve and S-Parameters

Abstract

A generic high frequency model of two-port RF detectors, based on I-V curves and S-parameters measurements, is proposed and applied to the case of AlGaN/GaN field effect transistors. The expression of the current responsivity (A/W) of any kind of transistor detector is derived for RF power injection both through the gate and the drain. The main novelty of the proposed model is the adequate consideration of the often neglected gate-drain coupling. The developed formalism also clarifies the voltage-current DC bias and the progressive and regressive power waves used to describe the RF excitation of the two-port non-linear device. The obtained frequency dependent closed-form expressions replicate very satisfactorily the current responsivity measurements made in AlGaN/GaN HEMTs up to 67~GHz. In order to improve the physical understanding of the frequency dependence of the current responsivity of transistors, it is expressed in terms of the magnitude and phase of drain-gate voltage ratio. The analysis of the different contributions to the RF responsivity reveals that the gate-drain capacitive coupling plays a key role in its frequency dependence.
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Dates and versions

hal-04510355 , version 1 (18-03-2024)

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Gaudencio Paz-Martínez, Philippe Artillan, Javier Mateos, Edouard Rochefeuille, Tomás González, et al.. A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I -V Curve and S-Parameters. IEEE Transactions on Microwave Theory and Techniques, 2024, 72 (1), pp.415-420. ⟨10.1109/TMTT.2023.3291391⟩. ⟨hal-04510355⟩
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