Encoding information onto the charge and spin state of a paramagnetic atom using MgO tunnelling spintronics - Institut des Nanosciences de Paris Access content directly
Preprints, Working Papers, ... (Preprint) Year : 2023

Encoding information onto the charge and spin state of a paramagnetic atom using MgO tunnelling spintronics

Abstract

An electrical current that flows across individual atoms or molecules can generate exotic quantum-based behavior, from memristive effects to Coulomb blockade and the promotion of quantum excited states. These fundamental effects typically appear one at a time in model junctions built using atomic tip or lateral techniques. So far, however, a viable industrial pathway for such discrete state devices has been lacking. Here, we demonstrate that a commercialized device platform can serve as this industrial pathway for quantum technologies. We have studied magnetic tunnel junctions with a MgO barrier containing C atoms. The paramagnetic localized electrons due to individual C atoms generate parallel nanotransport paths across the micronic device as deduced from magnetotransport experiments. Coulomb blockade effects linked to tunnelling magnetoresistance peaks can be electrically controlled, leading to a persistent memory effect. Our results position MgO tunneling spintronics as a promising platform to industrially implement quantum technologies.
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Dates and versions

hal-04274716 , version 1 (08-11-2023)

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Mathieu Lamblin, Bhavishya Chowrira, Victor da Costa, Bertrand Vileno, Loic Joly, et al.. Encoding information onto the charge and spin state of a paramagnetic atom using MgO tunnelling spintronics. 2023. ⟨hal-04274716⟩
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