1/f Tunnel Current Noise through Si-bound Alkyl Monolayers - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Pré-Publication, Document De Travail Année : 2007

1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

Résumé

We report on the low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/f γ power spectrum noise with 1< γ <1.2. We observe a slightly bias dependent background of the normalized power spectrum current noise (SI/I²). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise SI scales with and a model is proposed which is consistent with our experimental data.
Fichier principal
Vignette du fichier
noise_alkyl_on_SiH_-PRL_-081206.pdf (330.93 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-00125398 , version 1 (19-01-2007)
hal-00125398 , version 2 (10-05-2007)
hal-00125398 , version 3 (29-09-2007)

Identifiants

Citer

Nicolas Clement, Stephane Pleutin, Oliver Seitz, Stephane Lenfant, Dominique Vuillaume. 1/f Tunnel Current Noise through Si-bound Alkyl Monolayers. 2007. ⟨hal-00125398v1⟩
84 Consultations
79 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More