Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices

A. Zaslavsky
  • Fonction : Auteur

Résumé

Tunneling-based transistors (TFETs) have attracted interest due to their (theoretical) capability of switching more sharply than MOSFETs. However, other mechanisms that take place in SOI devices can provide even more abrupt switching and higher current. We examine the family of emerging TFET-competing devices based on barrier modulation, bipolar amplification and impact ionization. Practical results for devices fabricated in 14-28 nm FDSOI technology will be discussed.
Fichier non déposé

Dates et versions

hal-02003987 , version 1 (01-02-2019)

Identifiants

Citer

S. Cristoloveanu, J. Wan, P. Ferrari, M. Bawedin, C. Navarro, et al.. Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices. 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.5.12, ⟨10.1109/S3S.2014.7028228⟩. ⟨hal-02003987⟩
29 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More