Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2021

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

D. Cooper
  • Fonction : Auteur
  • PersonId : 1050841
V. Fan Arcara
  • Fonction : Auteur
L. Amichi
  • Fonction : Auteur
A. Mavel
  • Fonction : Auteur
N. Rochat
  • Fonction : Auteur
G. Feuillet
  • Fonction : Auteur
A. Courville
  • Fonction : Auteur
S. Vézian
  • Fonction : Auteur
V Fan Arcara
  • Fonction : Auteur
J. y Duboz

Résumé

Off-axis electron holography has been used to measure the width of the depletion region in a series of Tunnel Junction GaN light emitting diodes that have been prepared using different growth processes for blue emission. The total measured potentials are combinations of the mean inner potential, dopant potential and piezoelectric contributions. The dopant potential has been unmixed from the mean inner potential such that the width of the tunnel Junctions in the different diodes can be measured. The experimental results are then compared to secondary ion mass spectrometry, simulations and optoelectronic testing. We find that the measured tunnel junction widths are consistent with simulations as well as the current density and voltage characteristics. As such, off-axis electron holography has been demonstrated as a unique technique that can be used to reproducibly measure the electrostatic potentials in tunnel junctions with nm-scale resolution in real III-V device specimens.
Fichier principal
Vignette du fichier
1066816_1_art_file_17522882_qhj6cc.pdf (1.19 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03418879 , version 1 (08-11-2021)

Identifiants

Citer

D. Cooper, V. Fan Arcara, B. Damilano, L. Amichi, A. Mavel, et al.. Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization. Journal of Applied Physics, 2021, 130 (2), pp.025704. ⟨10.1063/5.0054810⟩. ⟨hal-03418879⟩
11 Consultations
93 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More