Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Power Electronic Devices and Components Année : 2023

Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT

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This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
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hal-03940756 , version 1 (16-01-2023)

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Paternité - Pas d'utilisation commerciale - Pas de modification

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Paes Fernandes Paes Pinto Rocha, L. Vauche, B. Mohamad, W. Vandendaele, E. Martinez, et al.. Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT. Power Electronic Devices and Components, 2023, pp.100033. ⟨10.1016/j.pedc.2023.100033⟩. ⟨hal-03940756⟩
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