Preferential crystal orientation etching of GaN nanopillars in Cl2 plasma - CNRS - Centre national de la recherche scientifique Access content directly
Journal Articles Materials Science in Semiconductor Processing Year : 2023
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hal-04216887 , version 1 (25-09-2023)

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Lucas Jaloustre, Valentin Ackermann, Saron Sales de Mello, Sébastien Labau, Camille Petit-Etienne, et al.. Preferential crystal orientation etching of GaN nanopillars in Cl2 plasma. Materials Science in Semiconductor Processing, 2023, 165, pp.107654. ⟨10.1016/j.mssp.2023.107654⟩. ⟨hal-04216887⟩
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