Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures
Résumé
A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is performed down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only necessary to fit the capacitance and drain current transfer characteristics versus temperature for long channel devices. In contrast, in short channel transistors, the neutral scattering mobility component µN is found to decrease at small gate length due to the increased impact of neutral defects close to source/drain ends whatever the temperature. Moreover, a closed-form analytical expression for the Coulomb scattering has been developed, useful for device compact modelling.
Domaines
Physique [physics]
Origine : Fichiers produits par l'(les) auteur(s)