Controlled nanopatterning and plasma etching of sub-100 nm nanopillars for low dislocation density of pendeo-epitaxy GaN: Towards MicroDisplays, - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Controlled nanopatterning and plasma etching of sub-100 nm nanopillars for low dislocation density of pendeo-epitaxy GaN: Towards MicroDisplays,

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hal-04624769 , version 1 (25-06-2024)

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  • HAL Id : hal-04624769 , version 1

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N. Labchir, S. Hammami, K. Baril, M. Wehbe, S. Labau, et al.. Controlled nanopatterning and plasma etching of sub-100 nm nanopillars for low dislocation density of pendeo-epitaxy GaN: Towards MicroDisplays,. SPIE Conference: Gallium Nitride Materials and Devices XVIII, Jan 2023, San Francisco, USA, United States. ⟨hal-04624769⟩
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