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Communication Dans Un Congrès Année : 2017

Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs

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hal-01966686 , version 1 (29-12-2018)

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  • HAL Id : hal-01966686 , version 1

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Demetrio Logoteta, Nicolas Cavassilas, Marco Pala, Alessandro Cresti, Marc Bescond. Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs. International Workshop on Computational Nanotechnology (IWCN 2017), Jun 2017, Windermere, United Kingdom. ⟨hal-01966686⟩
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