High Pressure, High Temperature Behavior of Sn-Ge-N and Si-Ti-N Compounds - CNRS - Centre national de la recherche scientifique Access content directly
Conference Papers Year : 2018
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hal-02861710 , version 1 (09-06-2020)

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  • HAL Id : hal-02861710 , version 1

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Shrikant Bhat, R. Faria, J. C., T. Katsura, Samuel Bernard, et al.. High Pressure, High Temperature Behavior of Sn-Ge-N and Si-Ti-N Compounds. 9th International Workshop Spinel Nitrides and Related Materials, Sep 2018, Rüdesheim, Germany. ⟨hal-02861710⟩
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