In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to deep cryogenic temperatures - Archive ouverte HAL Access content directly
Conference Papers Year : 2022

Dates and versions

hal-03853017 , version 1 (28-11-2022)

Identifiers

Cite

F. Serra Di Santa Maria, Christoforos Theodorou, Francis Balestra, Gerard Ghibaudo, Eunjung Cha, et al.. In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to deep cryogenic temperatures. IEEE 52nd European Solid-State Device Research Conference (ESSDERC), Sep 2022, Milan, Italy. ⟨10.1109/ESSDERC55479.2022.9947142⟩. ⟨hal-03853017⟩
20 View
11 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More