GaSe, a two-dimensional layered metal monochalcogenide, has recently attracted growing interest due to its unique electronic properties and potential technological applications. In this study, we investigate the oxidation mechanisms and properties of GaSe exposed to air for different durations, with the intensive use of Raman spectroscopy, combined with atomic force microscopy (AFM), photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS). Raman analysis reveals the oxidation of GaSe, resulting in the formation of a thin layer comprising Ga2Se3, Ga2O3, and amorphous selenium. Utilizing these signatures, oxidation is then tracked. Raman spectroscopy reveals that GaSe layer becomes oxidized almost immediately after exposure to air. However, the oxidation is a self-limiting process, taking roughly 15 min to construct an 8 Å thick layer of Ga₂O₃. XPS analysis shows a good agreement with Raman analysis. The polarized Raman study suggests that the Ga₂Se₃ and Ga₂O₃ layers tend to reach an oriented structural state over time. In ambient conditions, the intensity of all Raman modes and the luminescence decreases, linked to reduction in GaSe thickness. By using various Raman excitation wavelengths, we highlight the depth-dependent oxidation dynamics in this 2D layered GaSe material.