Hybridization of ellipsometry and energy loss spectra from XPS for bandgap and optical constants determination in SiON thin films
Abstract
Comparison of bandgap determination using ellipsometry and ELS-XPS. • Large energy bandgap difference between the two methods, up to 1.6 eV. • Combination of the two techniques, using a triple Tauc-Lorentz oscillator model. • Robust determination of the bandgap in the SiO 2-Si 3 N 4 system. • Method to measure n and k in a large energy range, from 1.5 up to 30 eV.
Domains
Engineering Sciences [physics]
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Manuscript - SURFCOAT-S-20-03635 - Revision Clean.pdf (834.53 Ko)
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